| PART |
Description |
Maker |
| DL-4038-025 |
High Power AlGaInP Laser Diode(大功率AlGaInP激光二极管)
Red Laser Diode High Power AlGaInP Laser Diode
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| HL6724MG |
AlGaInP Laser Diode
|
OPNEXT[Opnext. Inc.]
|
| HL6712G |
From old datasheet system
0.67 um band AlGaInP index-guided laser diode with a double heterostructure
|
Hitachi Semiconductor
|
| HL6312G |
AlGaInP Laser Diodes
|
Opnext. Inc.
|
| HL6554MG |
AlGaInP Laser Diodes
|
OPNEXT[Opnext. Inc.]
|
| HL6557MG |
AlGaInP Laser Diodes
|
OPNEXT[Opnext. Inc.]
|
| ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管
1557 nm, LASER DIODE
1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HL6312_13G HL6312 HL6312G HL6313G |
AlGaInP Laser Diodes
From old datasheet system
|
Hitachi Semiconductor
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
